News & Events

2015 8/31~9/3, IIC-China 2015 Fall Exhibition

2013/6/18-20,Taipei Nangang Exhibition Hall, 2013 Plant Factory Exposition Taiwan

2/23~25, Exhibition of IIC in Shenzhen Convention and Exhibition Center

GaN FET Gate Driver IC CS8201M has been approved & adopted by an international customer.

High Speed Super Low Power SRAM 8M has been approved & adopted by SECOM.

COVID-19 analysis - 256M SDRAM has been adopted by medical company.

512M SDRAM has been approved by POSTEK, China.

All set with Nankang IC Design Incubation Center’s technical support, Chiplus’s R&D is breaking new grounds in full power.

CS8826AF LED Driver IC

8M Super Low Power SRAM certificated by Dallas-Maxim.

CS8803 certificated by GLUX, April, 2008.

2M / 4M Low Power SRAM certificated by Sharp. January, 2008.

Low Power SRAM 256K certificated by Casio

Low Power SRAM 2M approved by LGE.

February 21, 2005: patent no. M257513 - a structure of chip stack package .

Low Power SRAM 256K, 1M, 4M have been approved by Dallas-Maxim Semiconductor, US.

Low Power SRAM 256K has been approved by Siemens, Germany.

Low Power SRAM 256K has been approved by DAEWOO, Korea.

Low Power SRAM 256K has been approved by SHARP, Japan

Low Power SRAM 4M has been approved by Sony-Ericsson.

Low Power SRAM 2M has been approved by Siemens